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POLARON EFFECTIVE MASS IN N-TYPE CADMIUM SULFIDE.KATARIA ND; MATHUR PC.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5127-5130; BIBL. 24 REF.Article

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LARGE-SIGNAL OF IMPATT DIODES.MATHUR PC; VIJENDER SHARMA.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 36; NO 1; PP. 269-274; ABS. ALLEM.; BIBL. 6 REF.Article

ELECTRICAL TRANSPORT MECHANISM IN THE CONDUCTION BAND OF GALLIUM ANTIMONIDE STUDIED FROM HALL-MOBILITY AND TRANSVERSE-MAGNETORESISTANCE MEASUREMENTSMATHUR PC; SUSHIL JAIN.1979; PHYS. REV., B; USA; DA. 1979; VOL. 19; NO 6; PP. 3159-3166; BIBL. 26 REF.Article

HIGH-TEMPERATURE MOBILITY ANALYSIS OF N-TYPE GAAS IN THE THREE-VALLEY (GAMMA ₆^C-L₆^C-X₆^C) MODELMATHUR PC; SAXENA TK.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 5018-5022; BIBL. 31 REF.Article

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INTRINSIC NOISE IN AVALANCHE DIODES. II: EXPERIMENTSAXENA P; MATHUR PC.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 2; PP. 737-742; ABS. GER; BIBL. 18 REF.Article

BEHAVIOR OF DIFFUSED JUNCTION SILICON SOLAR CELLS IN THE TEMPERATURE RANGE 77-500 KARORA JD; MATHUR PC.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3646-3650; BIBL. 23 REF.Article

PERFORMANCE OF SILICON SOLAR CELLS IN FRONT OF A WATER ABSORBERARORA JD; MATHUR PC.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 47; NO 2; PP. 167-170; BIBL. 5 REF.Article

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EFFECT OF ANODIC-OXIDE LAYER THICKNESS ON THE PERFORMANCE OF GAAS MOS SOLAR CELLSMATHUR PC; ARORA JD; HARTNAGEL HL et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 1; PP. 69-71; BIBL. 18 REF.Article

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